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Physics of Microfabrication: Front End Processing >> Content Detail



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Lec #TOPICSKEY DATES
1Introduction to 6.774

CMOS Process Flow
2Crystal Growth, Wafer Fabrication, and Basic Properties of Si WafersHomework 1 out
3Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers (cont.)

Wafer Cleaning and Gettering
4Wafer Cleaning and Gettering (cont.)Homework 1 due
5Wafer Cleaning and Gettering - Contamination Measurement Techniques

Oxidation and the Si/SiO2 Interface - Uses of Oxides and CV Measurement Techniques
Homework 2 out
6Oxidation and the Si/SiO2 Interface: Deal/Grove Model, Thin Oxide Models
7Oxidation and the Si/SiO2 Interface: 2D Effects, Doping Effects, Point DefectsHomework 2 due
8Dopant Diffusion - Need for Abrupt Profiles, Fick's Laws, Simple AnalyticHomework 3 out
9Dopant Diffusion - Numerical Techniques in Diffusion, E Field Effects
10Dopant Diffusion - Fermi Level Effects, I and V Assisted Diffusion
11Dopant Diffusion - Review Atomic Scale Models, Profile Measurement TechniquesHomework 3 due
12Ion Implantation and Annealing - Analytic Models and Monte Carlo
13Ion Implantation and Annealing - Physics of E Loss, Damage, Introduction to TEDHomework 4 out
14Transient Enhanced Diffusion (TED) - +1 Model, (311) Defects and TED Introduction
15Transient Enhanced Diffusion (TED) - Simulation Examples, TED Calculations, RSCE in detail
16The SUPREM IV Process SimulatorHomework 4 due
17Thin Film Deposition and Epitaxy - Introduction to CVD, Si Epitaxial GrowthHomework 5 out
18Thin Film Deposition and Epitaxy - CVD Examples and PVD
19Thin Film Deposition and Epitaxy - Modeling Topography of DepositionHomework 5 due
20Etching - Introduction
21Etching - Poly Gate Etching, Stringers, Modeling of Etching
22Silicides, Device Contacts, Novel Gate Materials
23Growth and Processing of Strained Si/SiGe and Stress Effects on Devices
24-26Report Presentations

 








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